Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors
By considering the effects of stress fields coming from lattice distortion as well as charge fields coming from line charges at edge dislocation cores on radiative recombination of exciton, a model of carriers’ radiative and non-radiative recombination has been established in GaN-based semiconductor...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4979504 |