The use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and Nanoparticles

Pulsed plasma processes open up the possibility of using very high plasma densities and modulated deposition in the synthesis of thin films and nanoparticles. The high plasma densities lead to a high degree of ionization of the source material...

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Main Authors: Iris Pilch, Daniel Söderström, Daniel Lundin, Ulf Helmersson
Format: Article
Language:English
Published: Hosokawa Powder Technology Foundation 2014-02-01
Series:KONA Powder and Particle Journal
Subjects:
Online Access:https://www.jstage.jst.go.jp/article/kona/31/0/31_2014008/_html/-char/en
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spelling doaj-27b8c7da25484fb48ace6840fa5ac7332021-02-03T00:52:32ZengHosokawa Powder Technology FoundationKONA Powder and Particle Journal0288-45342187-55372014-02-0131017118010.14356/kona.2014008konaThe use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and NanoparticlesIris Pilch0Daniel Söderström1Daniel Lundin2Ulf Helmersson3Plasma & Coatings Physics Division, Department of Physics, Chemistry and Biology (IFM)Plasma & Coatings Physics Division, Department of Physics, Chemistry and Biology (IFM)Ionautics ABPlasma & Coatings Physics Division, Department of Physics, Chemistry and Biology (IFM)Pulsed plasma processes open up the possibility of using very high plasma densities and modulated deposition in the synthesis of thin films and nanoparticles. The high plasma densities lead to a high degree of ionization of the source material, which creates new possibilities for surface engineering. Ions can, in contrast to atoms, be easily controlled with regard to their energy and direction, which is beneficial for thin film growth. Furthermore, ions can also increase the trapping probability of material on nanoparticles growing in the gas phase. The pulsed sputter ejection of source material also has other consequences: the material in the plasma and the material arrival on the growth surface will fluctuate strongly resulting in high level of supersaturation during pulse-on time. In this paper, an overview of the generation and properties of highly ionized pulsed plasmas is given. In addition, the use and importance of these types of discharges in the fields of thin-film and nanoparticle growth are also summarized.https://www.jstage.jst.go.jp/article/kona/31/0/31_2014008/_html/-char/enhipimshppmsipvdsputteringthin filmsnanoparticle synthesis
collection DOAJ
language English
format Article
sources DOAJ
author Iris Pilch
Daniel Söderström
Daniel Lundin
Ulf Helmersson
spellingShingle Iris Pilch
Daniel Söderström
Daniel Lundin
Ulf Helmersson
The use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and Nanoparticles
KONA Powder and Particle Journal
hipims
hppms
ipvd
sputtering
thin films
nanoparticle synthesis
author_facet Iris Pilch
Daniel Söderström
Daniel Lundin
Ulf Helmersson
author_sort Iris Pilch
title The use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and Nanoparticles
title_short The use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and Nanoparticles
title_full The use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and Nanoparticles
title_fullStr The use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and Nanoparticles
title_full_unstemmed The use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and Nanoparticles
title_sort use of highly ionized pulsed plasmas for the synthesis of advanced thin films and nanoparticles
publisher Hosokawa Powder Technology Foundation
series KONA Powder and Particle Journal
issn 0288-4534
2187-5537
publishDate 2014-02-01
description Pulsed plasma processes open up the possibility of using very high plasma densities and modulated deposition in the synthesis of thin films and nanoparticles. The high plasma densities lead to a high degree of ionization of the source material, which creates new possibilities for surface engineering. Ions can, in contrast to atoms, be easily controlled with regard to their energy and direction, which is beneficial for thin film growth. Furthermore, ions can also increase the trapping probability of material on nanoparticles growing in the gas phase. The pulsed sputter ejection of source material also has other consequences: the material in the plasma and the material arrival on the growth surface will fluctuate strongly resulting in high level of supersaturation during pulse-on time. In this paper, an overview of the generation and properties of highly ionized pulsed plasmas is given. In addition, the use and importance of these types of discharges in the fields of thin-film and nanoparticle growth are also summarized.
topic hipims
hppms
ipvd
sputtering
thin films
nanoparticle synthesis
url https://www.jstage.jst.go.jp/article/kona/31/0/31_2014008/_html/-char/en
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