The use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and Nanoparticles
Pulsed plasma processes open up the possibility of using very high plasma densities and modulated deposition in the synthesis of thin films and nanoparticles. The high plasma densities lead to a high degree of ionization of the source material...
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Hosokawa Powder Technology Foundation
2014-02-01
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doaj-27b8c7da25484fb48ace6840fa5ac7332021-02-03T00:52:32ZengHosokawa Powder Technology FoundationKONA Powder and Particle Journal0288-45342187-55372014-02-0131017118010.14356/kona.2014008konaThe use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and NanoparticlesIris Pilch0Daniel Söderström1Daniel Lundin2Ulf Helmersson3Plasma & Coatings Physics Division, Department of Physics, Chemistry and Biology (IFM)Plasma & Coatings Physics Division, Department of Physics, Chemistry and Biology (IFM)Ionautics ABPlasma & Coatings Physics Division, Department of Physics, Chemistry and Biology (IFM)Pulsed plasma processes open up the possibility of using very high plasma densities and modulated deposition in the synthesis of thin films and nanoparticles. The high plasma densities lead to a high degree of ionization of the source material, which creates new possibilities for surface engineering. Ions can, in contrast to atoms, be easily controlled with regard to their energy and direction, which is beneficial for thin film growth. Furthermore, ions can also increase the trapping probability of material on nanoparticles growing in the gas phase. The pulsed sputter ejection of source material also has other consequences: the material in the plasma and the material arrival on the growth surface will fluctuate strongly resulting in high level of supersaturation during pulse-on time. In this paper, an overview of the generation and properties of highly ionized pulsed plasmas is given. In addition, the use and importance of these types of discharges in the fields of thin-film and nanoparticle growth are also summarized.https://www.jstage.jst.go.jp/article/kona/31/0/31_2014008/_html/-char/enhipimshppmsipvdsputteringthin filmsnanoparticle synthesis |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Iris Pilch Daniel Söderström Daniel Lundin Ulf Helmersson |
spellingShingle |
Iris Pilch Daniel Söderström Daniel Lundin Ulf Helmersson The use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and Nanoparticles KONA Powder and Particle Journal hipims hppms ipvd sputtering thin films nanoparticle synthesis |
author_facet |
Iris Pilch Daniel Söderström Daniel Lundin Ulf Helmersson |
author_sort |
Iris Pilch |
title |
The use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and Nanoparticles |
title_short |
The use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and Nanoparticles |
title_full |
The use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and Nanoparticles |
title_fullStr |
The use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and Nanoparticles |
title_full_unstemmed |
The use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and Nanoparticles |
title_sort |
use of highly ionized pulsed plasmas for the synthesis of advanced thin films and nanoparticles |
publisher |
Hosokawa Powder Technology Foundation |
series |
KONA Powder and Particle Journal |
issn |
0288-4534 2187-5537 |
publishDate |
2014-02-01 |
description |
Pulsed plasma processes open up the possibility of using very high plasma densities and modulated deposition in the synthesis of thin films and nanoparticles. The high plasma densities lead to a high degree of ionization of the source material, which creates new possibilities for surface engineering. Ions can, in contrast to atoms, be easily controlled with regard to their energy and direction, which is beneficial for thin film growth. Furthermore, ions can also increase the trapping probability of material on nanoparticles growing in the gas phase. The pulsed sputter ejection of source material also has other consequences: the material in the plasma and the material arrival on the growth surface will fluctuate strongly resulting in high level of supersaturation during pulse-on time. In this paper, an overview of the generation and properties of highly ionized pulsed plasmas is given. In addition, the use and importance of these types of discharges in the fields of thin-film and nanoparticle growth are also summarized. |
topic |
hipims hppms ipvd sputtering thin films nanoparticle synthesis |
url |
https://www.jstage.jst.go.jp/article/kona/31/0/31_2014008/_html/-char/en |
work_keys_str_mv |
AT irispilch theuseofhighlyionizedpulsedplasmasforthesynthesisofadvancedthinfilmsandnanoparticles AT danielsoderstrom theuseofhighlyionizedpulsedplasmasforthesynthesisofadvancedthinfilmsandnanoparticles AT daniellundin theuseofhighlyionizedpulsedplasmasforthesynthesisofadvancedthinfilmsandnanoparticles AT ulfhelmersson theuseofhighlyionizedpulsedplasmasforthesynthesisofadvancedthinfilmsandnanoparticles AT irispilch useofhighlyionizedpulsedplasmasforthesynthesisofadvancedthinfilmsandnanoparticles AT danielsoderstrom useofhighlyionizedpulsedplasmasforthesynthesisofadvancedthinfilmsandnanoparticles AT daniellundin useofhighlyionizedpulsedplasmasforthesynthesisofadvancedthinfilmsandnanoparticles AT ulfhelmersson useofhighlyionizedpulsedplasmasforthesynthesisofadvancedthinfilmsandnanoparticles |
_version_ |
1724290031675244544 |