A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory With Enhanced Memory Window and Data Retention

A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory With Enhanced Memory Window and Data Retention

Graphene oxide quantum dots (GOQDs) are integrated with a charge trapping layer in a nonvolatile charge trapping memory. The device structures of Pd/SiO<sub>2</sub>/ZHO/SiO<sub>2</sub>/Si and Pd/SiO<sub>2</sub>/ZHO/GOQDs/SiO<sub>2</sub>/Si are fabricat...

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Bibliographic Details
Main Authors: Hong Wang, Xiaobing Yan, Xinlei Jia, Zichang Zhang, Chi-Hsiang Ho, Chao Lu, Yuanyuan Zhang, Tao Yang, Jianhui Zhao, Zhenyu Zhou, Mengliu Zhao, Deliang Ren
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Graphene oxide quantum dots
charge trapping memory
data retention property
Online Access:https://ieeexplore.ieee.org/document/8327580/

Internet

https://ieeexplore.ieee.org/document/8327580/

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