A Collective Study on Modeling and Simulation of Resistive Random Access Memory
Abstract In this work, we provide a comprehensive discussion on the various models proposed for the design and description of resistive random access memory (RRAM), being a nascent technology is heavily reliant on accurate models to develop efficient working designs and standardize its implementatio...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2018-01-01
|
| Series: | Nanoscale Research Letters |
| Online Access: | http://link.springer.com/article/10.1186/s11671-017-2419-8 |