Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers
Abstract To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reprodu...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2018-05-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1186/s11671-018-2571-9 |