Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers

Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers

Abstract To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reprodu...

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Bibliographic Details
Main Authors: Jae-Moon Chung, Xiaokun Zhang, Fei Shang, Ji-Hoon Kim, Xiao-Lin Wang, Shuai Liu, Baoguo Yang, Yong Xiang
Format: Article
Language:English
Published: SpringerOpen 2018-05-01
Series:Nanoscale Research Letters
Subjects:
Displays
a-IGZO
Thin film transistors
Etch-stopper
Reproducibility
Reliability
Online Access:http://link.springer.com/article/10.1186/s11671-018-2571-9

Internet

http://link.springer.com/article/10.1186/s11671-018-2571-9

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