All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3
We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3. We have developed epitaxial LaInO3 as the gate oxide on top of BaSnO3, which were recently reported to possess high thermal stability and...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-03-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4913587 |