Polarization-Charge Inversion at Al<sub>2</sub>O<sub>3</sub>/GaN Interfaces through Post-Deposition Annealing
The effects of post-deposition annealing (PDA) on the formation of polarization-charge inversion at ultrathin Al<sub>2</sub>O<sub>3</sub>/Ga-polar GaN interfaces are assessed by the analysis of energy band bending and measurement of electrical conduction. The PDA-induced posi...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-06-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/9/7/1068 |