Reversible displacive transformation in MnTe polymorphic semiconductor
Designing low power consumption and fast operation electronic phase-change devices remains a challenge. Here, the authors demonstrate the reversible displacive transformation in polycrystalline MnTe films to enable resistive switching via fast Joule heating for fast nonvolatile memory applications.
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2020-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-019-13747-5 |