Reversible displacive transformation in MnTe polymorphic semiconductor

Designing low power consumption and fast operation electronic phase-change devices remains a challenge. Here, the authors demonstrate the reversible displacive transformation in polycrystalline MnTe films to enable resistive switching via fast Joule heating for fast nonvolatile memory applications.

Bibliographic Details
Main Authors: Shunsuke Mori, Shogo Hatayama, Yi Shuang, Daisuke Ando, Yuji Sutou
Format: Article
Language:English
Published: Nature Publishing Group 2020-01-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-019-13747-5