Effect of <italic>In-Situ</italic> Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs

Effect of <italic>In-Situ</italic> Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs

AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors (MISHFETs) with different thickness of <italic>in-situ</italic> silicon carbon nitride (SiCN) cap layer were investigated. It was found that <italic>in-situ</italic> SiCN layer not only increases...

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Bibliographic Details
Main Authors: Jae-Hoon Lee, Ki-Sik Im, Jung-Hee Lee
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
AlGaN/GaN
metal insulator semiconductor heterostructure field effect transistors (MISHFETs)
in-situ silicon carbon nitride (SiCN)
cap layer
2DEG density
surface leakage current
Online Access:https://ieeexplore.ieee.org/document/9499231/

Internet

https://ieeexplore.ieee.org/document/9499231/

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