Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials
In situ Yb-doped amorphous carbon thin films were grown on Si substrates at low temperatures (<200 °C) by a simple one-step RF-PEMOCVD system as a potential photonic material for direct integration with Si CMOS back end-of-line processing. Room temperature photoluminescence around 1 µm was ob...
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doaj-2ab29acd15a14f90a2fe52a12bc634602020-11-24T23:15:36ZengMDPI AGMaterials1996-19442014-08-01785643566310.3390/ma7085643ma7085643Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic MaterialsHui-Lin Hsu0Keith R. Leong1I-Ju Teng2Michael Halamicek3Jenh-Yih Juang4Sheng-Rui Jian5Li Qian6Nazir P. Kherani7Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON M5S 3G4, CanadaDepartment of Electrical and Computer Engineering, University of Toronto, Toronto, ON M5S 3G4, CanadaCenter for Interdisciplinary Science, National Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Electrical and Computer Engineering, University of Toronto, Toronto, ON M5S 3G4, CanadaCenter for Interdisciplinary Science, National Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Materials Science and Engineering, I-Shou University, Kaohsiung 84001, TaiwanDepartment of Electrical and Computer Engineering, University of Toronto, Toronto, ON M5S 3G4, CanadaDepartment of Electrical and Computer Engineering, University of Toronto, Toronto, ON M5S 3G4, CanadaIn situ Yb-doped amorphous carbon thin films were grown on Si substrates at low temperatures (<200 °C) by a simple one-step RF-PEMOCVD system as a potential photonic material for direct integration with Si CMOS back end-of-line processing. Room temperature photoluminescence around 1 µm was observed via direct incorporation of optically active Yb3+ ions from the selected Yb(fod)3 metal-organic compound. The partially fluorinated Yb(fod)3 compound assists the suppression of photoluminescence quenching by substitution of C–H with C–F bonds. A four-fold enhancement of Yb photoluminescence was demonstrated via deuteration of the a-C host. The substrate temperature greatly influences the relative deposition rate of the plasma dissociated metal-organic species, and hence the concentration of the various elements. Yb and F incorporation are promoted at lower substrate temperatures, and suppressed at higher substrate temperatures. O concentration is slightly elevated at higher substrate temperatures. Photoluminescence was limited by the concentration of Yb within the film, the concentration of Yb ions in the +3 state, and the relative amount of quenching due to the various de-excitation pathways associated with the vibrational modes of the host a-C network. The observed wide full-width-at-half-maximum photoluminescence signal is a result of the variety of local bonding environments due to the a-C matrix, and the bonding of the Yb3+ ions to O and/or F ions as observed in the X-ray photoelectron spectroscopy analyses.http://www.mdpi.com/1996-1944/7/8/5643RF-PEMOCVDfluorinated ytterbium metal-organic compounddeuteratedhydrogenatedamorphous carbon |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Hui-Lin Hsu Keith R. Leong I-Ju Teng Michael Halamicek Jenh-Yih Juang Sheng-Rui Jian Li Qian Nazir P. Kherani |
spellingShingle |
Hui-Lin Hsu Keith R. Leong I-Ju Teng Michael Halamicek Jenh-Yih Juang Sheng-Rui Jian Li Qian Nazir P. Kherani Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials Materials RF-PEMOCVD fluorinated ytterbium metal-organic compound deuterated hydrogenated amorphous carbon |
author_facet |
Hui-Lin Hsu Keith R. Leong I-Ju Teng Michael Halamicek Jenh-Yih Juang Sheng-Rui Jian Li Qian Nazir P. Kherani |
author_sort |
Hui-Lin Hsu |
title |
Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials |
title_short |
Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials |
title_full |
Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials |
title_fullStr |
Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials |
title_full_unstemmed |
Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials |
title_sort |
reduction of photoluminescence quenching by deuteration of ytterbium-doped amorphous carbon-based photonic materials |
publisher |
MDPI AG |
series |
Materials |
issn |
1996-1944 |
publishDate |
2014-08-01 |
description |
In situ Yb-doped amorphous carbon thin films were grown on Si substrates at low temperatures (<200 °C) by a simple one-step RF-PEMOCVD system as a potential photonic material for direct integration with Si CMOS back end-of-line processing. Room temperature photoluminescence around 1 µm was observed via direct incorporation of optically active Yb3+ ions from the selected Yb(fod)3 metal-organic compound. The partially fluorinated Yb(fod)3 compound assists the suppression of photoluminescence quenching by substitution of C–H with C–F bonds. A four-fold enhancement of Yb photoluminescence was demonstrated via deuteration of the a-C host. The substrate temperature greatly influences the relative deposition rate of the plasma dissociated metal-organic species, and hence the concentration of the various elements. Yb and F incorporation are promoted at lower substrate temperatures, and suppressed at higher substrate temperatures. O concentration is slightly elevated at higher substrate temperatures. Photoluminescence was limited by the concentration of Yb within the film, the concentration of Yb ions in the +3 state, and the relative amount of quenching due to the various de-excitation pathways associated with the vibrational modes of the host a-C network. The observed wide full-width-at-half-maximum photoluminescence signal is a result of the variety of local bonding environments due to the a-C matrix, and the bonding of the Yb3+ ions to O and/or F ions as observed in the X-ray photoelectron spectroscopy analyses. |
topic |
RF-PEMOCVD fluorinated ytterbium metal-organic compound deuterated hydrogenated amorphous carbon |
url |
http://www.mdpi.com/1996-1944/7/8/5643 |
work_keys_str_mv |
AT huilinhsu reductionofphotoluminescencequenchingbydeuterationofytterbiumdopedamorphouscarbonbasedphotonicmaterials AT keithrleong reductionofphotoluminescencequenchingbydeuterationofytterbiumdopedamorphouscarbonbasedphotonicmaterials AT ijuteng reductionofphotoluminescencequenchingbydeuterationofytterbiumdopedamorphouscarbonbasedphotonicmaterials AT michaelhalamicek reductionofphotoluminescencequenchingbydeuterationofytterbiumdopedamorphouscarbonbasedphotonicmaterials AT jenhyihjuang reductionofphotoluminescencequenchingbydeuterationofytterbiumdopedamorphouscarbonbasedphotonicmaterials AT shengruijian reductionofphotoluminescencequenchingbydeuterationofytterbiumdopedamorphouscarbonbasedphotonicmaterials AT liqian reductionofphotoluminescencequenchingbydeuterationofytterbiumdopedamorphouscarbonbasedphotonicmaterials AT nazirpkherani reductionofphotoluminescencequenchingbydeuterationofytterbiumdopedamorphouscarbonbasedphotonicmaterials |
_version_ |
1725590254375665664 |