Operation Mechanism of a MoS2/BP Heterojunction FET

Operation Mechanism of a MoS2/BP Heterojunction FET

The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS2/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 × 107, with a lower subthreshold swing of ~54 mV/dec and a 1fA level off c...

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Bibliographic Details
Main Authors: Sung Kwan Lim, Soo Cheol Kang, Tae Jin Yoo, Sang Kyung Lee, Hyeon Jun Hwang, Byoung Hun Lee
Format: Article
Language:English
Published: MDPI AG 2018-10-01
Series:Nanomaterials
Subjects:
MoS2
black phosphorus
2D/2D heterojunction
junction FET
tunneling diode
tunneling FET
band-to-band tunneling (BTBT)
Online Access:http://www.mdpi.com/2079-4991/8/10/797

Internet

http://www.mdpi.com/2079-4991/8/10/797

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