Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga<sub>2</sub>O<sub>3</sub> Thin Films

Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga<sub>2</sub>O<sub>3</sub> Thin Films

A high-performance solar-blind photodetector with a metal&#8722;semiconductor&#8722;metal structure was fabricated based on amorphous In-doped Ga<sub>2</sub>O<sub>3</sub> thin films prepared at room temperature by radio frequency magnetron sputtering. The photodetecto...

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Bibliographic Details
Main Authors: Mingzhi Fang, Weiguo Zhao, Feifei Li, Deliang Zhu, Shun Han, Wangying Xu, Wenjun Liu, Peijiang Cao, Ming Fang, Youming Lu
Format: Article
Language:English
Published: MDPI AG 2019-12-01
Series:Sensors
Subjects:
amorphous ingao thin films
solar-blind photodetector
fast response
quasi-zener tunneling effect
Online Access:https://www.mdpi.com/1424-8220/20/1/129

Internet

https://www.mdpi.com/1424-8220/20/1/129

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