Structural characterization of the LaInO3/BaSnO3 interface via synchrotron scattering
The alkaline earth stannate BaSnO3 is a semiconductor with high carrier mobility at room-temperature when doped with La3+. When a thin epitaxial layer of LaInO3 is grown on lightly doped BaSnO3, a polar discontinuity between the orthorhombic, polar LaInO3 and the cubic, nonpolar Ba0.998La0.002SnO3 l...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-03-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5084058 |