Silicon Oxide Etching Process of NF<sub>3</sub> and F<sub>3</sub>NO Plasmas with a Residual Gas Analyzer

Silicon Oxide Etching Process of NF<sub>3</sub> and F<sub>3</sub>NO Plasmas with a Residual Gas Analyzer

The use of NF<sub>3</sub> is significantly increasing every year. However, NF<sub>3</sub> is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF<sub>3</sub> is required. F<sub>3</sub>NO is...

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Bibliographic Details
Main Authors: Woo-Jae Kim, In-Young Bang, Ji-Hwan Kim, Yeon-Soo Park, Hee-Tae Kwon, Gi-Won Shin, Min-Ho Kang, Youngjun Cho, Byung-Hyang Kwon, Jung-Hun Kwak, Gi-Chung Kwon
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Materials
Subjects:
nitrogen oxide trifluoride
nitrogen fluoride oxide
reactive ion etch
silicon oxide etch
Online Access:https://www.mdpi.com/1996-1944/14/11/3026

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https://www.mdpi.com/1996-1944/14/11/3026

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