Influence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor
A phase field method was used to investigate the influence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor containing a polycrystalline gate. Both the domain structure and the electrical behavior of the ferroelectric field-effect tra...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5046431 |