Modeling of A-DLTS Spectra of MOS Structures
Acquisition of basic characteristic of defects has become possible through a wide class of measurement techniqueswhich probe the interface, the near interface, as well as the bulk of semiconductor. Results presented here are basedessentially on the acoustic version of Deep Level Transient Spectrosco...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
VSB-Technical University of Ostrava
2008-01-01
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| Series: | Advances in Electrical and Electronic Engineering |
| Subjects: | |
| Online Access: | http://advances.utc.sk/index.php/AEEE/article/view/92 |