Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at the ZnS/Si interface
The effect of illumination in the visible spectral range on the magnitude of transverse acoustoelectric effect (TAE) in ZnS/Si structures was studied using a noncontact surface acoustic wave device based on the acoustoelectronic structure with an air gap. ZnS films were obtained using pyrolysis of t...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2018-10-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Subjects: | |
| Online Access: | http://journal-spqeo.org.ua/n3_2018/P263-272abstr.html |