Heterostructure ReS2/GaAs Saturable Absorber Passively Q-Switched Nd:YVO4 Laser
Abstract Heterostructure ReS2/GaAs was fabricated on a 110-μm (111) GaAs wafer by chemical vapor deposition method. Passively Q-switched Nd:YVO4 laser was demonstrated by employing heterostructure ReS2/GaAs as a saturable absorber (SA). The shortest pulse width of 51.3 ns with a repetition rate of 4...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2019-03-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1186/s11671-019-2953-7 |