Comparación de las técnicas de extracción del voltaje de umbral basadas en la característica gm/ID del MOSFETs.
Context: In advanced ultralow-power devices, it is necessary to use the accuracy extraction procedures of the MOSFET threshold voltage to fully characterize the devices. These procedures are based in the measurement of the Tran-conductance efficiency (gm/ID) and its first derivative in function of t...
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| Format: | Article |
| Language: | Spanish |
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Universidad Distrital Francisco Jose de Caldas
2017-04-01
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| Series: | Tecnura |
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| Online Access: | http://revistas.udistrital.edu.co/ojs/index.php/Tecnura/article/view/9466 |