A Physical Model for MOSFET Drain Current in Non-ohmic Regime Using Ohmic Regime Operation

A Physical Model for MOSFET Drain Current in Non-ohmic Regime Using Ohmic Regime Operation

In order to characterise the velocity saturation phenomena in short channel MOSFET's, a simple method is proposed in this work. It is based on the comparison between transistor behaviour in ohmic and saturation regime respectively. Therefore, the MOSFET characteristic Id0(Vd). avoiding velocit...

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Bibliographic Details
Main Authors: A. El Abbassi, Y. Amhouche, K. Raïs, R. Rmaily
Format: Article
Language:English
Published: Hindawi Limited 2001-01-01
Series:Active and Passive Electronic Components
Subjects:
MOSFET
Velocity saturation
Pinch off
Conductance
Charge.
Online Access:http://dx.doi.org/10.1155/2001/34065

Internet

http://dx.doi.org/10.1155/2001/34065

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