Design and evaluation of SiC multichip power module with low and symmetrical inductance

Design and evaluation of SiC multichip power module with low and symmetrical inductance

Compared to silicon devices, silicon carbide (SiC) devices have much lower C(oss) and Q(g); they can switch at much higher speed, SiC power modules are thus more sensitive to stray parameters. Large stray inductance may result in high voltage spikes and cause severe electro-magnetic interference (EM...

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Bibliographic Details
Main Authors: Shao Weihua, Li Ran, Zeng Zheng, Li Xiaoling, Philip Mawby
Format: Article
Language:English
Published: Wiley 2019-06-01
Series:The Journal of Engineering
Subjects:
multichip modules
electromagnetic interference
silicon compounds
power semiconductor devices
wide band gap semiconductors
power MOSFET
finite element analysis
SiC multichip power module
symmetrical inductance
silicon carbide devices
SiC power modules
high voltage spikes
unbalanced stray inductance
uneven current sharing
parallel devices
SiC devices
voltage spike mechanisms
multichip power modules
stray inductance distribution
finite element modelling software
current sharing consistency
parallel chips
symmetrical DBC layout
voltage spike reduction
asymmetrical layouts
current loops
stray inductance extraction
equivalent stray inductance
SiC MOSFET MCPM
direct bonded copper layout conditions
EMI issues
double pulse simulation
SiC
Online Access:https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8103

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https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8103

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