A quantum dot asymmetric self-gated nanowire FET for high sensitive detection
We present a novel device for weak light detection based on self-gated nanowire field effect structure with embedded quantum dots beside the nanowire current channel. The quantum dot with high localization energy will make the device work at high detecting temperature and the nano-chann...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4905787 |