A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

We present a novel device for weak light detection based on self-gated nanowire field effect structure with embedded quantum dots beside the nanowire current channel. The quantum dot with high localization energy will make the device work at high detecting temperature and the nano-chann...

Full description

Bibliographic Details
Main Authors: Zhangchun Shi, Xiaohong Yang, Chenglei Nie, Weihong Yin, Qin Han, Haiqiao Ni, Zhichuan Niu
Format: Article
Language:English
Published: AIP Publishing LLC 2015-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4905787
Description
Summary:We present a novel device for weak light detection based on self-gated nanowire field effect structure with embedded quantum dots beside the nanowire current channel. The quantum dot with high localization energy will make the device work at high detecting temperature and the nano-channel structure will provide high photocurrent gain. Simulation has been done to optimize the structure, explain the working principle and electrical properties of the devices. The nonlinear current-voltage characteristics have been demonstrated at different temperatures. The responsivity of the device is proven to be more than 4.8 × 106A/W at 50 K.
ISSN:2158-3226

Similar Items