A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

We present a novel device for weak light detection based on self-gated nanowire field effect structure with embedded quantum dots beside the nanowire current channel. The quantum dot with high localization energy will make the device work at high detecting temperature and the nano-chann...

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Bibliographic Details
Main Authors: Zhangchun Shi, Xiaohong Yang, Chenglei Nie, Weihong Yin, Qin Han, Haiqiao Ni, Zhichuan Niu
Format: Article
Language:English
Published: AIP Publishing LLC 2015-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4905787

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