Current Transport Mechanisms and Capacitance Characteristic in the InN/InP Schottky Structures

Current Transport Mechanisms and Capacitance Characteristic in the InN/InP Schottky Structures

In this work, electrical characterization of the current-voltage and capacitance- voltage curves for the Metal/InN/InP Schottky structures are investigated. We have studied electrically thin InN films realized by the nitridation of InP (100) substrates using a Glow Discharge Source (GDS) in ultra h...

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Bibliographic Details
Main Authors: K. AMEUR, Z. BENAMARA, H. MAZARI, N. BENSEDDIK, R. KHELIFI, M. MOSTEFAOUI, M. A. BENAMARA, B. GRUZZA, J. M. BLUET, C. BRU-CHEVALLIER
Format: Article
Language:English
Published: IFSA Publishing, S.L. 2014-05-01
Series:Sensors & Transducers
Subjects:
Indium nitride
Indium phosphide (100)
Electrical measurements
Schottky diode.
Online Access:http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_471.pdf

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http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_471.pdf

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