High Performance InGaAs/GaAs Strained Layer Superlattice Photodetectors Compatible with GaAs MESFET Technology
A high performance long-wavelength interdigitated metal-semiconductor-metal (MSM) photodetectors is reported in this paper. The photoabsorbing layer consists of an InGaAs/GaAs strained layer superlattice designed for light absorption in the long wavelength region. The structure, grown on a GaAs undo...
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| Format: | Article |
| Language: | English |
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Elsevier
1998-01-01
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| Series: | Journal of King Saud University: Engineering Sciences |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S1018363918306901 |