Does the Threshold Voltage Extraction Method Affect Device Variability?
The gate-all-around nanowire FET (GAA NW FET) is one of the most promising architectures for the next generation of transistors as it provides better performance than current mass-produced FinFETs, but it has been proven to be strongly affected by variability. For this reason, it is essential to be...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9300219/ |