Effect of tunneling injection on the modulation response of quantum dot lasers
In this paper, modulation bandwidth characteristics of InGaAs/GaAs quantum dot (QD) laser were theoretically investigated. Simulation was done by using the fourth order Runge-Kutta method. Effect of carrier relaxation life time, temperature and current density on characteristics of tunneling injecti...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Isfahan University of Technology
2014-03-01
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| Series: | Iranian Journal of Physics Research |
| Subjects: | |
| Online Access: | http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1293-1&slc_lang=en&sid=1 |