Effect of tunneling injection on the modulation response of quantum dot lasers

Effect of tunneling injection on the modulation response of quantum dot lasers

In this paper, modulation bandwidth characteristics of InGaAs/GaAs quantum dot (QD) laser were theoretically investigated. Simulation was done by using the fourth order Runge-Kutta method. Effect of carrier relaxation life time, temperature and current density on characteristics of tunneling injecti...

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Bibliographic Details
Main Authors: Y. Yekta kiya, E. Rajaee, Z. Denesh
Format: Article
Language:English
Published: Isfahan University of Technology 2014-03-01
Series:Iranian Journal of Physics Research
Subjects:
quantum dot laser
tunneling injection
turn on delay
modulation bandwidth
carrier relaxation life time
current density
Online Access:http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1293-1&slc_lang=en&sid=1
Description
Summary:In this paper, modulation bandwidth characteristics of InGaAs/GaAs quantum dot (QD) laser were theoretically investigated. Simulation was done by using the fourth order Runge-Kutta method. Effect of carrier relaxation life time, temperature and current density on characteristics of tunneling injection QD laser (TIL) and conventional QD laser (CL) were analyzed. Results showed that tunneling injection in QD laser increases the modulation bandwidth indicating that it is very useful for using in the fiber optic communication systems.
ISSN:1682-6957

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