Effect of tunneling injection on the modulation response of quantum dot lasers
In this paper, modulation bandwidth characteristics of InGaAs/GaAs quantum dot (QD) laser were theoretically investigated. Simulation was done by using the fourth order Runge-Kutta method. Effect of carrier relaxation life time, temperature and current density on characteristics of tunneling injecti...
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Isfahan University of Technology
2014-03-01
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| Series: | Iranian Journal of Physics Research |
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| Online Access: | http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1293-1&slc_lang=en&sid=1 |
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doaj-2c9efa130704461c82c7b56334beed332020-11-24T23:19:37ZengIsfahan University of TechnologyIranian Journal of Physics Research1682-69572014-03-01134421429Effect of tunneling injection on the modulation response of quantum dot lasersY. Yekta kiya0E. Rajaee1Z. Denesh2 In this paper, modulation bandwidth characteristics of InGaAs/GaAs quantum dot (QD) laser were theoretically investigated. Simulation was done by using the fourth order Runge-Kutta method. Effect of carrier relaxation life time, temperature and current density on characteristics of tunneling injection QD laser (TIL) and conventional QD laser (CL) were analyzed. Results showed that tunneling injection in QD laser increases the modulation bandwidth indicating that it is very useful for using in the fiber optic communication systems.http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1293-1&slc_lang=en&sid=1quantum dot laser tunneling injection turn on delay modulation bandwidth carrier relaxation life time current density |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Y. Yekta kiya E. Rajaee Z. Denesh |
| spellingShingle |
Y. Yekta kiya E. Rajaee Z. Denesh Effect of tunneling injection on the modulation response of quantum dot lasers Iranian Journal of Physics Research quantum dot laser tunneling injection turn on delay modulation bandwidth carrier relaxation life time current density |
| author_facet |
Y. Yekta kiya E. Rajaee Z. Denesh |
| author_sort |
Y. Yekta kiya |
| title |
Effect of tunneling injection on the modulation response of quantum dot lasers |
| title_short |
Effect of tunneling injection on the modulation response of quantum dot lasers |
| title_full |
Effect of tunneling injection on the modulation response of quantum dot lasers |
| title_fullStr |
Effect of tunneling injection on the modulation response of quantum dot lasers |
| title_full_unstemmed |
Effect of tunneling injection on the modulation response of quantum dot lasers |
| title_sort |
effect of tunneling injection on the modulation response of quantum dot lasers |
| publisher |
Isfahan University of Technology |
| series |
Iranian Journal of Physics Research |
| issn |
1682-6957 |
| publishDate |
2014-03-01 |
| description |
In this paper, modulation bandwidth characteristics of InGaAs/GaAs quantum dot (QD) laser were theoretically investigated. Simulation was done by using the fourth order Runge-Kutta method. Effect of carrier relaxation life time, temperature and current density on characteristics of tunneling injection QD laser (TIL) and conventional QD laser (CL) were analyzed. Results showed that tunneling injection in QD laser increases the modulation bandwidth indicating that it is very useful for using in the fiber optic communication systems. |
| topic |
quantum dot laser tunneling injection turn on delay modulation bandwidth carrier relaxation life time current density |
| url |
http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1293-1&slc_lang=en&sid=1 |
| work_keys_str_mv |
AT yyektakiya effectoftunnelinginjectiononthemodulationresponseofquantumdotlasers AT erajaee effectoftunnelinginjectiononthemodulationresponseofquantumdotlasers AT zdenesh effectoftunnelinginjectiononthemodulationresponseofquantumdotlasers |
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1725577824882917376 |