Inversion charge density of MOS transistor with generalized logistic functions
In this paper, the expression for the charge density in inversion layer at the surface of semiconductor has been improved. The improvement is related to the replacement of an empirical smoothing factor by new one which has generalized logistic (GL) functional form. The introduction of the G...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
International Institute for the Science of Sintering, Beograd
2018-01-01
|
| Series: | Science of Sintering |
| Subjects: | |
| Online Access: | http://www.doiserbia.nb.rs/img/doi/0350-820X/2018/0350-820X1802225K.pdf |