C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3

C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3

In this letter, MOS capacitors with bilayer dielectrics consisted of large bandgap Al2O3 and high-k HfO2 in different stacking order on n-type doped (100) β-Ga2O3 are investigated through C − V and J − V measurement. The C − V measurement results reveal that incoming HfO2 makes both bilayer structur...

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Bibliographic Details
Main Authors: Hang Dong, Wenxiang Mu, Yuan Hu, Qiming He, Bo Fu, Huiwen Xue, Yuan Qin, Guangzhong Jian, Ying Zhang, Shibing Long, Zhitai Jia, Hangbing Lv, Qi Liu, Xutang Tao, Ming Liu
Format: Article
Language:English
Published: AIP Publishing LLC 2018-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5031183

Internet

http://dx.doi.org/10.1063/1.5031183

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