A physics-based model of flat-band capacitance for metal oxide thin-film transistors
This paper proposes a physics-based model of flat-band capacitance Cfb for metal oxide thin-film transistors, in which the influences of free carriers and electrons trapped in deep/tail states are taken into account. Hereinto, a parameter Ls is introduced to characterize the screening length in the...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5023032 |