TCAD Modeling of Resistive-Switching of HfO2 Memristors: Efficient Device-Circuit Co-Design for Neuromorphic Systems

TCAD Modeling of Resistive-Switching of HfO2 Memristors: Efficient Device-Circuit Co-Design for Neuromorphic Systems

In neuromorphic computing, memristors (or “memory resistors”) have been primarily studied as key elements in artificial synapse implementations, where the memristor provides a variable weight with intrinsic long-term memory capabilities, based on its modifiable resistive-switching characteristics. H...

Full description

Bibliographic Details
Main Authors: Andre Zeumault , Shamiul Alam , Zack Wood , Ryan J. Weiss , Ahmedullah Aziz , Garrett S. Rose 
Format: Article
Language:English
Published: Frontiers Media S.A. 2021-10-01
Series:Frontiers in Nanotechnology
Subjects:
memristor
neuromorphic
nanoelectronics
non-volatile memory
RRAM
Monte Carlo
Online Access:https://www.frontiersin.org/articles/10.3389/fnano.2021.734121/full

Internet

https://www.frontiersin.org/articles/10.3389/fnano.2021.734121/full

Similar Items