Gate bias-dependent junction characteristics of silicon nanowires suspended between polysilicon electrodes
Realistic integration of 1D materials into future nanodevices is limited by the lack of a manipulation process that allows a large number of nanowires to be arranged into an integrated circuit. In this work, we have grown Si nanowire bridges using a thin-film catalyst in a batch process at 200 °C an...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2011-01-01
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| Series: | Science and Technology of Advanced Materials |
| Online Access: | http://iopscience.iop.org/1468-6996/12/6/065004 |