Scalability of valence change memory: From devices to tip-induced filaments
Since the early days of the investigation on resistive switching (RS), the independence of the ON-state resistance with actual cell area has been a trademark of filamentary-switching. However, with the continuous downscaling of the memory cell down to 10 x 10 nm2 and below, the persistence of this p...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4961150 |