Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application

Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application

A device suitability analysis is performed herein by comparing the performance of a silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistor (MOSFET) and a gallium nitride (GaN) high-electron mobility transistor (HEMT), which are wide-bandgap (WBG) power semiconductor devices in induc...

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Bibliographic Details
Main Authors: Kwang-Hyung Cha, Chang-Tae Ju, Rae-Young Kim
Format: Article
Language:English
Published: MDPI AG 2020-10-01
Series:Energies
Subjects:
WBG device
induction heating
GaN HEMT
SiC MOSFET
performance comparison
evaluation
Online Access:https://www.mdpi.com/1996-1073/13/20/5351

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https://www.mdpi.com/1996-1073/13/20/5351

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