Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application
A device suitability analysis is performed herein by comparing the performance of a silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistor (MOSFET) and a gallium nitride (GaN) high-electron mobility transistor (HEMT), which are wide-bandgap (WBG) power semiconductor devices in induc...
Main Authors: | , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-10-01
|
Series: | Energies |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1073/13/20/5351 |
id |
doaj-2ddb88a5acfb4cf3b3fc630762a48891 |
---|---|
record_format |
Article |
spelling |
doaj-2ddb88a5acfb4cf3b3fc630762a488912020-11-25T03:58:29ZengMDPI AGEnergies1996-10732020-10-01135351535110.3390/en13205351Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating ApplicationKwang-Hyung Cha0Chang-Tae Ju1Rae-Young Kim2The Department of Electrical and Biomedical Engineering, Hanyang University, Seoul 04763, KoreaThe Department of Electrical and Biomedical Engineering, Hanyang University, Seoul 04763, KoreaThe Department of Electrical and Biomedical Engineering, Hanyang University, Seoul 04763, KoreaA device suitability analysis is performed herein by comparing the performance of a silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistor (MOSFET) and a gallium nitride (GaN) high-electron mobility transistor (HEMT), which are wide-bandgap (WBG) power semiconductor devices in induction heating (IH) systems. The WBG device presents advantages such as high-speed switching owing to its excellent physical properties, and when it is applied to the IH system, a high output power can be achieved through high-frequency driving. To exploit these advantages effectively, a suitability analysis comparing SiC and GaN with IH systems is required. In this study, SiC MOSFET and GaN HEMT are applied to the general half-bridge series resonant converter topology, and comparisons of the conduction loss, switching loss, reverse conduction loss, and thermal performance considering the characteristics of the device and the system conditions are performed. Accordingly, the device suitability in an IH system is analyzed. To verify the device conformance analysis, a resonant converter prototype with SiC and GaN rated at 650 V is constructed. The analysis is verified by an experimental comparison of power loss and thermal performance.https://www.mdpi.com/1996-1073/13/20/5351WBG deviceinduction heatingGaN HEMTSiC MOSFETperformance comparisonevaluation |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Kwang-Hyung Cha Chang-Tae Ju Rae-Young Kim |
spellingShingle |
Kwang-Hyung Cha Chang-Tae Ju Rae-Young Kim Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application Energies WBG device induction heating GaN HEMT SiC MOSFET performance comparison evaluation |
author_facet |
Kwang-Hyung Cha Chang-Tae Ju Rae-Young Kim |
author_sort |
Kwang-Hyung Cha |
title |
Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application |
title_short |
Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application |
title_full |
Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application |
title_fullStr |
Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application |
title_full_unstemmed |
Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application |
title_sort |
analysis and evaluation of wbg power device in high frequency induction heating application |
publisher |
MDPI AG |
series |
Energies |
issn |
1996-1073 |
publishDate |
2020-10-01 |
description |
A device suitability analysis is performed herein by comparing the performance of a silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistor (MOSFET) and a gallium nitride (GaN) high-electron mobility transistor (HEMT), which are wide-bandgap (WBG) power semiconductor devices in induction heating (IH) systems. The WBG device presents advantages such as high-speed switching owing to its excellent physical properties, and when it is applied to the IH system, a high output power can be achieved through high-frequency driving. To exploit these advantages effectively, a suitability analysis comparing SiC and GaN with IH systems is required. In this study, SiC MOSFET and GaN HEMT are applied to the general half-bridge series resonant converter topology, and comparisons of the conduction loss, switching loss, reverse conduction loss, and thermal performance considering the characteristics of the device and the system conditions are performed. Accordingly, the device suitability in an IH system is analyzed. To verify the device conformance analysis, a resonant converter prototype with SiC and GaN rated at 650 V is constructed. The analysis is verified by an experimental comparison of power loss and thermal performance. |
topic |
WBG device induction heating GaN HEMT SiC MOSFET performance comparison evaluation |
url |
https://www.mdpi.com/1996-1073/13/20/5351 |
work_keys_str_mv |
AT kwanghyungcha analysisandevaluationofwbgpowerdeviceinhighfrequencyinductionheatingapplication AT changtaeju analysisandevaluationofwbgpowerdeviceinhighfrequencyinductionheatingapplication AT raeyoungkim analysisandevaluationofwbgpowerdeviceinhighfrequencyinductionheatingapplication |
_version_ |
1724457083702607872 |