2.3 µm InGaAsSb/AlGaAsSb Quantum-Well Laser Diode via InAs/GaSb Superlattice Layer on GaAs Substrate
We present 2.3 μm InGaAsSb/AlGaAsSb type I laser diodes (LDs) on GaAs substrate; a superlattice (SL) layer was introduced as an interconnecting layer playing an important role in manipulating the optical field distribution and reducing free-carrier absorption in multiquantum wells (MQWs) for achievi...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2016-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2016/8393502 |