Characterization of the SiO2 film deposited by using plasma enhanced chemical vapor deposition (PECVD) with TEOS/N2/O2
The purpose of this study was to examine how certain parameters like temperature, pressure, and gas composition affect the characteristics of SiO2 film by Plasma Enhanced Chemical Vapor Deposition (PECVD). We used of low temperature and an inductively coupled plasma (ICP) for various with gas mixtur...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Association of Metallurgical Engineers of Serbia
2013-12-01
|
| Series: | Metallurgical & Materials Engineering |
| Subjects: | |
| Online Access: | http://metall-mater-eng.com/index.php/home/article/view/175 |