Optimization of MBE Growth Conditions of In<sub>0.52</sub>Al<sub>0.48</sub>As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers

Optimization of MBE Growth Conditions of In<sub>0.52</sub>Al<sub>0.48</sub>As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers

We investigate molecular beam epitaxy (MBE) growth conditions of micrometers-thick In<sub>0.52</sub>Al<sub>0.48</sub>As designed for waveguide of InGaAs/InAlAs/InP quantum cascade lasers. The effects of growth temperature and V/III ratio on the surface morphology and defect s...

Full description

Bibliographic Details
Main Authors: Piotr Gutowski, Iwona Sankowska, Tomasz Słupiński, Dorota Pierścińska, Kamil Pierściński, Aleksandr Kuźmicz, Krystyna Gołaszewska-Malec, Maciej Bugajski
Format: Article
Language:English
Published: MDPI AG 2019-05-01
Series:Materials
Subjects:
InAlAs
molecular beam epitaxy
surface morphology
quantum cascade lasers
X-ray spectroscopy
Online Access:https://www.mdpi.com/1996-1944/12/10/1621

Internet

https://www.mdpi.com/1996-1944/12/10/1621

Similar Items