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Flash memory cells data loss caused by total ionizing dose and heavy ions

Flash memory cells data loss caused by total ionizing dose and heavy ions

Bibliographic Details
Main Authors: Petrov Andrey, Vasil’ev Alexey, Ulanova Anastasia, Chumakov Alexander, Nikiforov Alexander
Format: Article
Language:English
Published: De Gruyter 2014-10-01
Series:Open Physics
Subjects:
flash memory
single event upsets
total dose
Online Access:https://doi.org/10.2478/s11534-014-0503-6
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Internet

https://doi.org/10.2478/s11534-014-0503-6

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