Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure
In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD) high-k dielectric stacks with device-quality p-type GaSb(001) epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H2/Ar plasma trea...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4905452 |