Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from genera...

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Main Authors:	A. M. Smirnov, E. C. Young, V. E. Bougrov, J. S. Speck, A. E. Romanov
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2016-01-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/1.4939907

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spelling	doaj-2f40540d024e43dca38e69765c467f5f2020-11-25T02:28:45ZengAIP Publishing LLCAPL Materials2166-532X2016-01-0141016105016105-810.1063/1.4939907006601APMCritical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructuresA. M. Smirnov0E. C. Young1V. E. Bougrov2J. S. Speck3A. E. Romanov4ITMO University, St. Petersburg 197101, RussiaMaterials Department, UCSB, Santa Barbara, California 93106, USAITMO University, St. Petersburg 197101, RussiaMaterials Department, UCSB, Santa Barbara, California 93106, USAITMO University, St. Petersburg 197101, RussiaWe calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from generation of basal slip originated MDs to PSMDs after the angle between c-axis in wurtzite crystal structure and the direction of semipolar growth reaches a particular value, e.g., ∼70° for Al0.13Ga0.87N/GaN ( h 0 h ̄ 1 ) semipolar heterostructures. This means that for some semipolar growth orientations of III-nitride heterostructures biaxial relaxation of misfit stress can be realized. The results of modeling are compared to experimental data on the onset of plastic relaxation in AlxGa1−xN/GaN heterostructures.http://dx.doi.org/10.1063/1.4939907
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	A. M. Smirnov E. C. Young V. E. Bougrov J. S. Speck A. E. Romanov
spellingShingle	A. M. Smirnov E. C. Young V. E. Bougrov J. S. Speck A. E. Romanov Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures APL Materials
author_facet	A. M. Smirnov E. C. Young V. E. Bougrov J. S. Speck A. E. Romanov
author_sort	A. M. Smirnov
title	Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures
title_short	Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures
title_full	Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures
title_fullStr	Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures
title_full_unstemmed	Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures
title_sort	critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar iii-nitride heterostructures
publisher	AIP Publishing LLC
series	APL Materials
issn	2166-532X
publishDate	2016-01-01
description	We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from generation of basal slip originated MDs to PSMDs after the angle between c-axis in wurtzite crystal structure and the direction of semipolar growth reaches a particular value, e.g., ∼70° for Al0.13Ga0.87N/GaN ( h 0 h ̄ 1 ) semipolar heterostructures. This means that for some semipolar growth orientations of III-nitride heterostructures biaxial relaxation of misfit stress can be realized. The results of modeling are compared to experimental data on the onset of plastic relaxation in AlxGa1−xN/GaN heterostructures.
url	http://dx.doi.org/10.1063/1.4939907
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Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

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