Research on IGBT junction temperature model based on united-parameters
The insulated gate bipolar transistor (IGBT) is the most expensive central component in the converter interior, but it is also one of the most vulnerable to failure. The failure of power electronic system is mainly due to temperature change. Therefore, the accurate extraction of IGBT module junction...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2020-12-01
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| Series: | Energy Reports |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352484720314311 |