Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeO<sub>x</sub> Interfacial Layers Formed by Plasma Pre-Oxidation

Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeO<sub>x</sub> Interfacial Layers Formed by Plasma Pre-Oxidation

For realizing of Ge complementary metal-oxide-semiconductor with a Ge gate stack with thin equivalent oxide thickness, low interface state density (D<sub>it</sub>) and high reliability. In this paper, we examine the slow trap behaviors in the ALD high-k materials including Al<sub>2...

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Bibliographic Details
Main Authors: Mengnan Ke, Mitsuru Takenaka, Shinichi Takagi
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Slow trap density
Ge
MOS interfaces
plasma oxidation
ALD high-k films
Online Access:https://ieeexplore.ieee.org/document/8330012/

Internet

https://ieeexplore.ieee.org/document/8330012/

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