Phase separation in amorphous tantalum oxide from first principles
The transition between Ta2O5 and TaO2 governs resistive switching in tantalum oxide-based resistive random access memory. Despite its importance, the Ta2O5–TaO2 transition is scarcely described in the literature, in part because the tantalum oxide layer in devices is amorphous, which makes it diffic...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-07-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0011390 |