The physical analysis on electrical junction of junctionless FET
We propose the concept of the electrical junction in a junctionless (JL) field-effect-transistor (FET) to illustrate the transfer characteristics of the JL FET. In this work, nanowire (NW) junctionless poly-Si thin-film transistors are used to demonstrate this conception of the electrical junction....
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4975768 |