Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review
In this article, we will review recent progress in the growth of topological insulator (TI) thin films by molecular beam epitaxy (MBE). The materials we focus on are the V2-VI3 family of TIs. These materials are ideally bulk insulating with surface states housing Dirac excitations which are spin-mom...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2016-11-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2073-4352/6/11/154 |