Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon
A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the charact...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4826583 |